MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density...
| Main Authors: | , , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Elsevier BV,
2019-07-18T17:48:57Z.
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| Subjects: | |
| Online Access: | Get fulltext |