Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs
We present a comprehensive study of bias temperature instability (BTI) in GaN MOSFETs under moderate positive and negative gate bias stress. We investigate the evolution of threshold voltage (V T ), maximum transconductance (g m,max ), and subthreshold swing (S). Our results show a universal continu...
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2020-07-14T02:20:43Z.
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| Subjects: | |
| Online Access: | Get fulltext |