First Demonstration of a Self-Aligned GaN p-FET
© 2019 IEEE. In this work, we demonstrate a self-aligned p-FET with a GaN/Al0 2Ga0 8N (20 nm)/GaN heterostructure grown by metal-organic-chemical vapor deposition (MOCVD) on Si substrate. Our 100 nm channel length device with recess depth of 70 nm exhibits a record ON-resistance of 400 Ωmm and ON-cu...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2021-11-01T18:35:34Z.
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| Subjects: | |
| Online Access: | Get fulltext |