Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

In this paper, a simple and reliable method to estimate the channel temperature of GaN high-electron mobility transistors (HEMTs) is proposed. The technique is based on electrical measurements of performance-related figures of merit (I [subscript Dmax] and R [subscript ON]) with a synchronized pulse...

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Bibliographic Details
Main Authors: Joh, Jungwoo (Contributor), del Alamo, Jesus A. (Contributor), Jimenez, Jose L. (Author), Tserng, Hua-Quen (Author), Chou, Tso-Min (Author), Chowdhury, Uttiya (Author)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers, 2010-03-16T15:52:54Z.
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