Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

• Main Authors: Joh, Jungwoo (Contributor), del Alamo, Jesus A. (Contributor), Jimenez, Jose L. (Author), Tserng, Hua-Quen (Author), Chou, Tso-Min (Author), Chowdhury, Uttiya (Author)
• Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
• Format: Article
• Language: English
• Published: Institute of Electrical and Electronics Engineers, 2010-03-16T15:52:54Z.
• Subjects: Article
• Online Access: Get fulltext

In this paper, a simple and reliable method to estimate the channel temperature of GaN high-electron mobility transistors (HEMTs) is proposed. The technique is based on electrical measurements of performance-related figures of merit (I [subscript Dmax] and R [subscript ON]) with a synchronized pulsed I -V setup. As our technique involves only electrical measurement, no special design in device geometry is required, and packaged devices can be measured. We apply this technique to different device structures and validate its sensitivity and robustness.
United States Army Research Laboratory (Contract W911QX-05-C-0087)