Seamless On-wafer integration of GaN HEMTs and Si(100) MOSFETs

The integration of III-V compound semiconductors and silicon (100) CMOS technologies has been a long pursued goal. A robust low-cost heterogeneous integration technology would make the outstanding analog and mixed-signal performance of compound semiconductor electronics available on an as-needed bas...

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Bibliographic Details
Main Authors: Palacios, Tomas (Contributor), Piner, E. L. (Author), Lee, J. (Contributor), Chung, J. W. (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers, 2010-10-08T15:12:15Z.
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