Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate
We have evaluated the electrical reliability of GaN HEMTs on Si by carrying out V[subscript DS] = 0 V step-stress experiments. We have found that these devices show a degradation pattern that is very similar to that of devices on SiC with a critical voltage at which a sudden degradation of the gate...
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| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers,
2010-10-08T17:21:16Z.
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| Subjects: | |
| Online Access: | Get fulltext |