Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices
The substrate resistance of 45 nm CMOS devices shows a strong dependence on the distance between the device edge and the substrate ring; as well as on the number of sides that the device is surrounded by the contact ring. We find that the unilateral gain is impacted by the substrate resistance (R[su...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers,
2010-10-14T19:29:36Z.
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| Subjects: | |
| Online Access: | Get fulltext |