Performance analysis of ultra-scaled InAs HEMTs
The scaling behavior of ultra-scaled InAs HEMTs is investigated using a 2-dimensional real-space effective mass ballistic quantum transport simulator. The simulation methodology is first benchmarked against experimental Id-Vgs data obtained from devices with gate lengths ranging from 30 to 50 nm, wh...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers,
2010-10-21T19:39:42Z.
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| Subjects: | |
| Online Access: | Get fulltext |