Extraction of Virtual-Source Injection Velocity in sub-100 nm III-V HFETs

Extraction of Virtual-Source Injection Velocity in sub-100 nm III-V HFETs

We have experimentally extracted the virtual-source electron injection velocity, vx0, of various III-V HFETs at room temperature. This is the carrier velocity that matters for logic applications of these transistors. Sub-100 nm devices with mu n > 10,000 cm2/V-s exhibit vx0 in excess of 3 x 107 c...

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Bibliographic Details
Main Authors: Brar, B. (Author), Kim, D. H. (Contributor), del Alamo, Jesus A. (Contributor), Antoniadis, Dimitri A. (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers, 2010-10-21T20:30:37Z.
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