30-nm InAs PHEMTs With f[subscript T] = 644 GHz and f[subscript max] = 681 GHz
We present 30-nm InAs pseudomorphic HEMTs (PHEMTs) on an InP substrate with record fT characteristics and well-balanced fT and f[subscript max] values. This result was obtained by improving short-channel effects through widening of the side-recess spacing (L[subscript side]) to 150 nm, as well as re...
| Main Authors: | , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers,
2012-06-28T13:29:02Z.
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| Subjects: | |
| Online Access: | Get fulltext |