Hole mobility enhancement in In0.41 Ga0.59 Sb quantum-well field-effect transistors

Hole mobility enhancement in In0.41 Ga0.59 Sb quantum-well field-effect transistors

The impact of 〈110〉 uniaxial strain on the characteristics of p-channel In[subscript 0.41]Ga[subscript 0.59]Sb quantum-well field-effect transistors (QW-FETs) is studied through chip-bending experiments. Uniaxial strain is found to affect the linear-regime drain current and the threshold voltage of...

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Bibliographic Details
Main Authors: Xia, Ling (Contributor), Boos, J. Brad (Author), Bennett, Brian R. (Author), Ancona, Mario G. (Author), del Alamo, Jesus A. (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2012-08-01T19:10:25Z.
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