Hole mobility enhancement in In0.41 Ga0.59 Sb quantum-well field-effect transistors

• Main Authors: Xia, Ling (Contributor), Boos, J. Brad (Author), Bennett, Brian R. (Author), Ancona, Mario G. (Author), del Alamo, Jesus A. (Contributor)
• Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
• Format: Article
• Language: English
• Published: American Institute of Physics (AIP), 2012-08-01T19:10:25Z.
• Subjects: Article
• Online Access: Get fulltext

 The impact of 〈110〉 uniaxial strain on the characteristics of p-channel In[subscript 0.41]Ga[subscript 0.59]Sb quantum-well field-effect transistors (QW-FETs) is studied through chip-bending experiments. Uniaxial strain is found to affect the linear-regime drain current and the threshold voltage of the FET through the modulation of the hole mobility of the two-dimensional hole gas (2DHG) in the QW-FET. The piezoresistance coefficients of the 2DHG have been determined to be π[superscript ∥][subscript 〈110〉] = 1.17×10[superscript −10] cm[superscript 2]/dyn and π[superscript ⊥][subscript 〈110〉] = −1.9×10[superscript −11] cm[superscript 2]/dyn. The value of π[superscript ∥][subscript 〈110〉] is 1.5 times that of holes in Si metal-oxide-semiconductor (MOS) field-effect transistors and establishes InGaSb as a promising material system for a future III-V complementary MOS (CMOS) technology.