Delay Analysis of Graphene Field-Effect Transistors

Delay Analysis of Graphene Field-Effect Transistors

In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic...

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Bibliographic Details
Main Authors: Wang, Han (Contributor), Hsu, Allen Long (Contributor), Lee, Dong Seup (Contributor), Kim, Ki Kang (Contributor), Kong, Jing (Contributor), Palacios, Tomas (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2012-08-14T19:01:58Z.
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