Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors
In this work, we investigate the time evolution of electrical degradation of GaN high electron mobility transistors under high voltage stress in the OFF state. We found that the gate current starts to degrade first, followed by degradation in current collapse and eventually permanent degradation in...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2012-09-10T13:41:16Z.
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| Subjects: | |
| Online Access: | Get fulltext |