Advanced Gate Technologies for State-of-the-art f[subscript T] in AlGaN/GaN HEMTs
In this paper, the lower-than-expected frequency performance observed in many AlGaN/GaN high electron mobility transistors (HEMTs) has been attributed to a significant drop of the intrinsic small-signal transconductance (g[subscript m]) with respect to the intrinsic DC g[subscript m]. To reduce this...
| Main Authors: | , , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2012-09-12T19:20:41Z.
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| Subjects: | |
| Online Access: | Get fulltext |