Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography
The authors, demonstrated that 4.5-nm-half-pitch structures could be achieved using electron-beam lithography, followed by salty development. They also hypothesized a development mechanism for hydrogen silsesquioxane, wherein screening of the resist surface charge is crucial in achieving a high init...
| Main Authors: | , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
American Vacuum Society (AVS),
2012-09-19T16:43:13Z.
|
| Subjects: | |
| Online Access: | Get fulltext |