Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate
AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (V[subscript bk]) of AlGaN/GaN HEMTs grown on Si (less than 600 V for 2 μm total nitride epi...
| Main Authors: | , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2012-09-21T16:07:37Z.
|
| Subjects: | |
| Online Access: | Get fulltext |