50-nm E-mode In[subscript 0.7]Ga[subscript 0.3]As PHEMTs on 100-mm InP substrate with f[subscript max] > 1 THz
We have demonstrated 50-nm enhancement-mode (E-mode) In[subscript 0.7]Ga[subscript 0.3]As PHEMTs with f[subscript max] in excess of 1 THz. The devices feature a Pt gate sinking process to effectively thin down the In[subscript 0.52]Al[subscript 0.48]As barrier layer, together with a two-step recess...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2012-09-24T18:12:24Z.
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| Subjects: | |
| Online Access: | Get fulltext |