Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier
Electroluminescence (EL) spectroscopy in combination with drift-diffusion simulations was used to prove the presence of impact ionisation in AlGaN/GaN HEMTs illustrated on InGaN back-barrier devices. Regardless of the level of gate leakage current, which is dominated by contributions such as surface...
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Institution of Electrical Engineers (IEE),
2012-10-01T19:07:52Z.
|
| Subjects: | |
| Online Access: | Get fulltext |