BN/Graphene/BN Transistors for RF Applications

BN/Graphene/BN Transistors for RF Applications

In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to en...

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Bibliographic Details
Main Authors: Taychatanapat, Thiti (Contributor), Wang, Han (Contributor), Hsu, Allen Long (Contributor), Watanabe, Kenji (Author), Taniguchi, Takashi (Author), Jarillo-Herrero, Pablo (Contributor), Palacios, Tomas (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2012-10-16T13:03:07Z.
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