AlGaN/GaN HEMT With 300-GHz fmax

AlGaN/GaN HEMT With 300-GHz fmax

We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC substrate with a record power-gain cutoff frequency (f[subscript max]). To achieve this high f[subscript max], we combined a low-damage gate-recess technology, scaled device geometry, and recessed source/drain o...

Full description

Bibliographic Details
Main Authors: Chung, Jinwook (Contributor), Hoke, William E. (Author), Chumbes, Eduardo M. (Author), Palacios, Tomas (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2013-05-03T19:51:01Z.
Subjects:
Article
Online Access:Get fulltext

Internet

Get fulltext

Similar Items