AlGaN/GaN HEMT With 300-GHz fmax
We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC substrate with a record power-gain cutoff frequency (f[subscript max]). To achieve this high f[subscript max], we combined a low-damage gate-recess technology, scaled device geometry, and recessed source/drain o...
Main Authors: | , , , |
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Other Authors: | , |
Format: | Article |
Language: | English |
Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2013-05-03T19:51:01Z.
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Subjects: | |
Online Access: | Get fulltext |