L[subscript g] = 60 nm recessed In[subscript 0.7]Ga[subscript 0.3]As metal-oxide-semiconductor field-effect transistors with Al[subscript 2]O[subscript 3] insulator

L[subscript g] = 60 nm recessed In[subscript 0.7]Ga[subscript 0.3]As metal-oxide-semiconductor field-effect transistors with Al[subscript 2]O[subscript 3] insulator

In this Letter, we report on sub-100 nm recessed In[subscript 0.7]Ga[subscript 0.3]As metal-oxide-semiconductorfield-effect transistors(MOSFETs) with outstanding logic and high-frequency performance. The device features ex-situ atomic-layer-deposition (ALD) 2-nm Al[subscript 2]O[subscript 3] layer o...

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Bibliographic Details
Main Authors: Kim, D.-H (Author), Li, J. (Author), Kuo, J.-M (Author), Pinsukanjana, P. (Author), Kao, Y.-C (Author), Chen, P. (Author), Papavasiliou, A. (Author), King, C. (Author), Regan, E. (Author), Urteaga, M. (Author), Brar, B. (Author), Kim, T.-W (Author), del Alamo, Jesus A. (Contributor), Antoniadis, Dimitri A. (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2014-03-28T14:33:06Z.
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