Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru

Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru

Show other versions (1)

Copper films with a thickness in the nanometer range are required as seed layers for the electrochemical Cu deposition to form multilevel interconnects in ultralarge-scale integrated (ULSI) electronic devices. Continuously shrinking device dimensions and increasing aspect ratios of the dual-damascen...

Full description

Bibliographic Details
Main Authors: Waechtler, Thomas, Schulze, Steffen, Hofmann, Lutz, Hermann, Sascha, Roth, Nina, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Hietschold, Michael
Language:English
Published: Technische Universität Chemnitz 2009
Subjects:
info:eu-repo/classification/ddc/620
ddc:620
info:eu-repo/classification/ddc/530
ddc:530
info:eu-repo/classification/ddc/540
ddc:540
Dielektrische Funktion
Dünne Schicht
Ellipsometrie
Galvanische Abscheidung
Kupfer
Kupferoxide
Metallisierungsschicht
Reduktion <Chemie>
Ruthenium
Siliciumdioxid
Tantalnitride
ULSI
Verkupferung
Atomic Layer Deposition (ALD)
Copper
Copper oxide
Dielectric function
Electroplating
Ellipsometry
Metallization
Reduction
Silicon oxide
Tantalum nitride
Thin film
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200901295
https://monarch.qucosa.de/id/qucosa%3A19177
https://monarch.qucosa.de/api/qucosa%3A19177/attachment/ATT-0/
https://monarch.qucosa.de/api/qucosa%3A19177/attachment/ATT-1/

Internet

http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200901295
https://monarch.qucosa.de/id/qucosa%3A19177
https://monarch.qucosa.de/api/qucosa%3A19177/attachment/ATT-0/
https://monarch.qucosa.de/api/qucosa%3A19177/attachment/ATT-1/

Similar Items