Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru

Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru

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Copper films with a thickness in the nanometer range are required as seed layers for the electrochemical Cu deposition to form multilevel interconnects in ultralarge-scale integrated (ULSI) electronic devices. Continuously shrinking device dimensions and increasing aspect ratios of the dual-damascen...

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Bibliographic Details
Main Authors: Waechtler, Thomas, Schulze, Steffen, Hofmann, Lutz, Hermann, Sascha, Roth, Nina, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Hietschold, Michael
Other Authors: TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik
Format: Others
Language:English
Published: Universitätsbibliothek Chemnitz 2009
Subjects:
Atomic Layer Deposition (ALD)
Copper
Copper oxide
Dielectric function
Electroplating
Ellipsometry
Metallization
Reduction
Silicon oxide
Tantalum nitride
Thin film
ddc:620
ddc:530
ddc:540
Dielektrische Funktion
Dünne Schicht
Ellipsometrie
Galvanische Abscheidung
Kupfer
Kupferoxide
Metallisierungsschicht
Reduktion <Chemie>
Ruthenium
Siliciumdioxid
Tantalnitride
ULSI
Verkupferung
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200901295
http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200901295
http://www.qucosa.de/fileadmin/data/qucosa/documents/5851/data/Waechtler_PosterALD2009.pdf
http://www.qucosa.de/fileadmin/data/qucosa/documents/5851/20090129.txt

Internet

http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200901295
http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200901295
http://www.qucosa.de/fileadmin/data/qucosa/documents/5851/data/Waechtler_PosterALD2009.pdf
http://www.qucosa.de/fileadmin/data/qucosa/documents/5851/20090129.txt

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