Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru
Copper films with a thickness in the nanometer range are required as seed layers for the electrochemical Cu deposition to form multilevel interconnects in ultralarge-scale integrated (ULSI) electronic devices. Continuously shrinking device dimensions and increasing aspect ratios of the dual-damascen...
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Universitätsbibliothek Chemnitz
2009
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ndltd-DRESDEN-oai-qucosa.de-bsz-ch1-2009012952013-01-07T19:57:52Z Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru Waechtler, Thomas Schulze, Steffen Hofmann, Lutz Hermann, Sascha Roth, Nina Schulz, Stefan E. Gessner, Thomas Lang, Heinrich Hietschold, Michael Atomic Layer Deposition (ALD) Copper Copper oxide Dielectric function Electroplating Ellipsometry Metallization Reduction Silicon oxide Tantalum nitride Thin film ddc:620 ddc:530 ddc:540 Dielektrische Funktion Dünne Schicht Ellipsometrie Galvanische Abscheidung Kupfer Kupferoxide Metallisierungsschicht Reduktion <Chemie> Ruthenium Siliciumdioxid Tantalnitride ULSI Verkupferung Copper films with a thickness in the nanometer range are required as seed layers for the electrochemical Cu deposition to form multilevel interconnects in ultralarge-scale integrated (ULSI) electronic devices. Continuously shrinking device dimensions and increasing aspect ratios of the dual-damascene structures in the copper-based metallization schemes put ever more stringent requirements on the films with respect to their conformality in nanostructures and thickness homogeneity across large wafers. Due to its intrinsic self-limiting film growth characteristic, atomic layer deposition (ALD) appears appropriate for homogeneously coating complex substrates and to replace conventional physical vapor deposition (PVD) methods beyond the 32 nm technology node. To overcome issues of direct Cu ALD, such as film agglomeration at higher temperatures or reduced step coverage in plasma-based processes, an ALD copper oxide film may be grown under mild processing conditions, while a subsequent reduction step converts it to metallic copper. In this poster, which was presented at the AVS 9th International Conference on Atomic Layer Deposition (ALD 2009), held in Monterey, California from 19 to 22 July 2009, we report detailed film growth studies of ALD copper oxide in the self-limiting regime on SiO2, TaN and Ru. Applications in subsequent electrochemical deposition processes are discussed, comparing Cu plating results on as-deposited PVD Ru as well as with PVD and reduced ALD Cu seed layer. Universitätsbibliothek Chemnitz TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik Fraunhofer ENAS, American Vacuum Society (AVS), 2009-08-10 doc-type:lecture application/pdf text/plain application/zip http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200901295 urn:nbn:de:bsz:ch1-200901295 http://www.qucosa.de/fileadmin/data/qucosa/documents/5851/data/Waechtler_PosterALD2009.pdf http://www.qucosa.de/fileadmin/data/qucosa/documents/5851/20090129.txt AVS 9th International Conference on Atomic Layer Deposition (ALD 2009), Monterey, CA (USA), July 19-22, 2009 eng |
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language |
English |
format |
Others
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NDLTD |
topic |
Atomic Layer Deposition (ALD) Copper Copper oxide Dielectric function Electroplating Ellipsometry Metallization Reduction Silicon oxide Tantalum nitride Thin film ddc:620 ddc:530 ddc:540 Dielektrische Funktion Dünne Schicht Ellipsometrie Galvanische Abscheidung Kupfer Kupferoxide Metallisierungsschicht Reduktion <Chemie> Ruthenium Siliciumdioxid Tantalnitride ULSI Verkupferung |
spellingShingle |
Atomic Layer Deposition (ALD) Copper Copper oxide Dielectric function Electroplating Ellipsometry Metallization Reduction Silicon oxide Tantalum nitride Thin film ddc:620 ddc:530 ddc:540 Dielektrische Funktion Dünne Schicht Ellipsometrie Galvanische Abscheidung Kupfer Kupferoxide Metallisierungsschicht Reduktion <Chemie> Ruthenium Siliciumdioxid Tantalnitride ULSI Verkupferung Waechtler, Thomas Schulze, Steffen Hofmann, Lutz Hermann, Sascha Roth, Nina Schulz, Stefan E. Gessner, Thomas Lang, Heinrich Hietschold, Michael Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru |
description |
Copper films with a thickness in the nanometer
range are required as seed layers for the
electrochemical Cu deposition to form multilevel
interconnects in ultralarge-scale
integrated (ULSI) electronic devices.
Continuously shrinking device dimensions and
increasing aspect ratios of the dual-damascene
structures in the copper-based metallization
schemes put ever more stringent requirements on
the films with respect to their conformality in
nanostructures and thickness homogeneity across
large wafers. Due to its intrinsic self-limiting
film growth characteristic, atomic layer
deposition (ALD) appears
appropriate for
homogeneously coating complex substrates and to
replace conventional physical vapor deposition
(PVD) methods beyond the 32 nm technology node.
To overcome issues of direct Cu ALD, such as
film agglomeration at higher temperatures or
reduced step coverage in plasma-based processes,
an
ALD copper oxide film may be grown under mild
processing conditions, while a subsequent
reduction
step converts it to metallic copper. In this
poster, which was presented at the AVS 9th
International Conference on Atomic Layer
Deposition (ALD 2009), held in Monterey,
California from
19 to 22 July 2009, we
report detailed film growth studies of ALD
copper
oxide in the self-limiting regime on SiO2, TaN
and Ru. Applications in subsequent
electrochemical deposition processes are
discussed, comparing Cu plating results on
as-deposited
PVD Ru as well as with PVD and reduced ALD Cu
seed layer. |
author2 |
TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik |
author_facet |
TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik Waechtler, Thomas Schulze, Steffen Hofmann, Lutz Hermann, Sascha Roth, Nina Schulz, Stefan E. Gessner, Thomas Lang, Heinrich Hietschold, Michael |
author |
Waechtler, Thomas Schulze, Steffen Hofmann, Lutz Hermann, Sascha Roth, Nina Schulz, Stefan E. Gessner, Thomas Lang, Heinrich Hietschold, Michael |
author_sort |
Waechtler, Thomas |
title |
Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru |
title_short |
Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru |
title_full |
Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru |
title_fullStr |
Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru |
title_full_unstemmed |
Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru |
title_sort |
detailed study of copper oxide ald on sio2, tan, and ru |
publisher |
Universitätsbibliothek Chemnitz |
publishDate |
2009 |
url |
http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200901295 http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200901295 http://www.qucosa.de/fileadmin/data/qucosa/documents/5851/data/Waechtler_PosterALD2009.pdf http://www.qucosa.de/fileadmin/data/qucosa/documents/5851/20090129.txt |
work_keys_str_mv |
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_version_ |
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