Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru
Copper films with a thickness in the nanometer range are required as seed layers for the electrochemical Cu deposition to form multilevel interconnects in ultralarge-scale integrated (ULSI) electronic devices. Continuously shrinking device dimensions and increasing aspect ratios of the dual-damascen...
Main Authors: | Waechtler, Thomas, Schulze, Steffen, Hofmann, Lutz, Hermann, Sascha, Roth, Nina, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Hietschold, Michael |
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Other Authors: | TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik |
Format: | Others |
Language: | English |
Published: |
Universitätsbibliothek Chemnitz
2009
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Subjects: | |
Online Access: | http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200901295 http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200901295 http://www.qucosa.de/fileadmin/data/qucosa/documents/5851/data/Waechtler_PosterALD2009.pdf http://www.qucosa.de/fileadmin/data/qucosa/documents/5851/20090129.txt |
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