Degradation of GaN High Electron Mobility Transistors under high-power and high-temperature stress
Thesis: S.M. in Electrical Engineering, Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014. === 41 === Cataloged from PDF version of thesis. === Includes bibliographical references (pages 77-79). === GaN HEMTs (High Electron Mobility Transistors) a...
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| Format: | Others |
| Language: | English |
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Massachusetts Institute of Technology
2014
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| Online Access: | http://hdl.handle.net/1721.1/91085 |