Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH_3 and SiF_4
Main Authors: | , , |
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Language: | en |
Published: |
American Institute of Physics
2001
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Online Access: | http://dx.doi.org/10.1063/1.1381556 http://hdl.handle.net/2237/7040 |