A numerical simulation for a gated field emission triode considering temperature effect
碩士 === 國立交通大學 === 電子研究所 === 81 === Presented here is a new numerical siumlation tool for gated field emission triode(GFET) considering space charge effect and temperature effect. The mesh structure used in our simulation tool is very flexib...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1993
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71255991839973512206 |