Diffusion Behaviors of Si and Ge in GaN and Application of Ohmic Contacts
碩士 === 國立交通大學 === 材料科學與工程研究所 === 85 === The reduction of contact resistance is significant to fabricate device and obtain best performance. Doping method focus on the implantation and in-situ before, the former cause different damages affec...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56710256594957985331 |