Mechanism of Hot Carrier-Reliability in High Voltage P-type LDMOS Transistors
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === The major purpose in this thesis studies hot carrier stress induced degradations and mechanisms of 12V/15V p-channel High Voltage Device. As the device subjects hot carrier stress, the important parameter degradations of device are directed to analyze the me...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88483043118686390617 |