DC and AC Analysis of Tri-Gate Fin-FET Device

碩士 === 國立臺灣大學 === 電子工程學研究所 === 95 === This thesis reports an analysis of DC and AC behavior of Tri-Gate Fin-FET (Field Effect Transistor) device. In chapter 1, we make an introduction for Fin-FET and describe its evolution from conventional MOS device and propose a structure called Tri-Gate Fin-FET...

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Bibliographic Details
Main Authors: Bo-Han Hsieh, 謝泊含
Other Authors: James-B Kuo
Format: Others
Language:zh-TW
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/15925616770814649882