| Summary: | 碩士 === 國立臺灣大學 === 電子工程學研究所 === 95 === This thesis reports an analysis of DC and AC behavior of Tri-Gate Fin-FET (Field Effect Transistor) device.
In chapter 1, we make an introduction for Fin-FET and describe its evolution from conventional MOS device and propose a structure called Tri-Gate Fin-FET device.
In chapter 2, we discuss the DC phenomenon of a 100nm Tri-Gate Fin-FET device with the N+ poly gate in different fin width, height, and doping.
In chapter 3, we discuss the capacitance phenomenon of a 100nm Tri-Gate Fin-FET device with the N+ poly gate in different fin width, height, and doping.
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