DC and AC Analysis of Tri-Gate Fin-FET Device

• Main Authors: Bo-Han Hsieh, 謝泊含
• Other Authors: James-B Kuo
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/15925616770814649882

碩士 === 國立臺灣大學 === 電子工程學研究所 === 95 === This thesis reports an analysis of DC and AC behavior of Tri-Gate Fin-FET (Field Effect Transistor) device. In chapter 1, we make an introduction for Fin-FET and describe its evolution from conventional MOS device and propose a structure called Tri-Gate Fin-FET device. In chapter 2, we discuss the DC phenomenon of a 100nm Tri-Gate Fin-FET device with the N+ poly gate in different fin width, height, and doping. In chapter 3, we discuss the capacitance phenomenon of a 100nm Tri-Gate Fin-FET device with the N+ poly gate in different fin width, height, and doping.