DC and AC Analysis of Tri-Gate Fin-FET Device
碩士 === 國立臺灣大學 === 電子工程學研究所 === 95 === This thesis reports an analysis of DC and AC behavior of Tri-Gate Fin-FET (Field Effect Transistor) device. In chapter 1, we make an introduction for Fin-FET and describe its evolution from conventional MOS device and propose a structure called Tri-Gate Fin-FET...
Main Authors: | Bo-Han Hsieh, 謝泊含 |
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Other Authors: | James-B Kuo |
Format: | Others |
Language: | zh-TW |
Published: |
2006
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Online Access: | http://ndltd.ncl.edu.tw/handle/15925616770814649882 |
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