Studies on Hot-Carrier Reliability in High-Voltage MOSFETs
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === In this dissertation, the hot-carrier-induced degradation in 0.35 μm n-type self-aligned lateral double-diffused MOSFET (LDMOS) and p-type drain-extended MOSFET (DEMOS) devices are studied. When the nLDMOS device is used in a power switching circuits with...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46789891396748452586 |