Ultrathin Ta-Si-C amorphous films as a diffusion barrier for copper metallization
碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 96 === International Technology Roadmap for Semiconductor (ITRS) predicted that the thickness of barrier will be reduced eventually to 1.6 nm in 2018 for 21 nm technology. In continuously reducing the thickness of diffusion barrier, while maintaining the low resist...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8y6he6 |