Hot-Carrier and Bias Temperature Instability Effects on 90 nm Node MOSFETs

碩士 === 國立臺北科技大學 === 機電整合研究所 === 96 === Hot carrier (HC) effect is a critical reliability problem. In early researches, HC of MOSFET showed the worst degradation at DAHC mode low temperature. However, a recent study reported that the worst case has switched from DAHC to CHC mode from low to high temp...

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Bibliographic Details
Main Authors: Ai-Erh Chuang, 莊愛爾
Other Authors: Heng-Sheng Huang
Format: Others
Language:en_US
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/9a294x