Characteristics and hot carrier reliability of n-type MOS transistor with difference channel width
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 98 === Shallow trench isolation (STI) is inevitable to be used in isolating the neighboring transistors in today CMOS technology, but their influences on hot-carrier (HC) reliability is not clear especially on the narrow width n-MOSFETs. In this work, n-MOSFETs...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/07593925756797135505 |