Studies on hot-carrier induced degradation in DEMOS
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 98 === This paper is a 0.35μm process with P-channel extended drain MOS transistor (DEMOS transistor device) to measure the hot carrier reliability study. The parameters use to analysis for the degradation of the main degradation mechanism and testing the use of co...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11760501826479141015 |