Width dependence of hot carrier degradation in P-channel MOS Transistors
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 98 === In this thesis, hot carrier reliability and device characteristics of p-channel MOS transistors with different channel width are investigated. The p-MOSFETs used in this experiments performed have I/O devices: L =0.24μm, W = 10μm、5μm、1μm with gate ox...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/44803175757004828656 |