| Summary: | 碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 98 === To inhibit Cu diffusion in the interconnect, an effective diffusion barrier layer with high thermal stability, low electrical resistivity and good interface adhesion is demanded. Because the high-entropy alloy(HEA) has high thermal stability, low resistivity and yield an amorphous structure, the HEA is a promising diffusion barrier for Cu metallization.
This study prepared (Fe0.55Co0.45)90B6Ti2Nb2 thin films on p-type (100) Si substrates under various substrate biases (-250V - +250V), by using Ar, Ar+H2(5%) and Ar+N2 as plasma. A sandwiched Cu/HEA(10 nm)/Si was annealed at a temperature between 400 oC and 600 oC in Ar+H2(5%) ambient by a RTA. The properties of the films were elucidated using a FPP, XRD, SEM and EDS, and the Cu/HEA(10 nm )/Si structure has a high failure temperature under -200V substrate bias.
The result reveals that Cu (20.7 at.% HEA) thin film had the lowest resistivity of 2.8 μΩcm when the film was annealed at 600 oC, and Cu (31.1 at.% HEA) thin film showed the failure temperature at least 700°C and had a resistivity of 3.8 μΩcm. The Cu(HEA)/Si thin films is promising to be used in advanced barrierless metallizations.
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