Characteristics of amorphous Ta-Si-C film as adiffusion barrier for copper metallization
碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所 === 98 === Copper is to be used in deep submicron ultra-large scale integration (ULSI) metallization due to its lower resistivity and better electromigration resistance. Since Cu diffuses repidly in Si, and therefore introduces deep-level traps, a proper diffusion...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/xt44k5 |