Characteristics of amorphous Ta-Si-C film as adiffusion barrier for copper metallization
碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所 === 98 === Copper is to be used in deep submicron ultra-large scale integration (ULSI) metallization due to its lower resistivity and better electromigration resistance. Since Cu diffuses repidly in Si, and therefore introduces deep-level traps, a proper diffusion...
Main Authors: | Wu-Jia Su, 蘇武加 |
---|---|
Other Authors: | Jau-Shiung Fang |
Format: | Others |
Language: | zh-TW |
Published: |
2010
|
Online Access: | http://ndltd.ncl.edu.tw/handle/xt44k5 |
Similar Items
-
Characteristics of amorphous Ta-Si-C film as adiffusion barrier for copper metallization
by: Wu-Jia Su, et al.
Published: (2010) -
Ultrathin Ta-Si-C amorphous films as a diffusion barrier for copper metallization
by: Chin-Fu Chiu, et al.
Published: (2008) -
Evaluation of Ta-Ni amorphous thin film properties for copper metallization in integrated circuits
by: Tsao-Piao Hsu, et al.
Published: (2005) -
TaSiN and TaSi Diffusion Barriers in Cu Metallization
by: Shih Chan Huang, et al.
Published: (2000) -
Study of an ultra-thin TaC diffusion barrier in the application of copper metallization
by: Wei-Li Wu, et al.
Published: (2005)