Effects of Device Dimension on Characteristics and Reliability of N-LDMOS Transistors
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 101 === The main purpose of this thesis is to investigate the device characteristics and hot carrier reliability of P-buried N-type LDMOS with different device dimension. The device used in this thesis has four main layout parameters b, a, c, and R, which correspon...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/23092320087905306776 |