CLM Effect for 28nm Stacked HK nMOSFETs after DPN Treatment with Annealing Temperatures

碩士 === 明新科技大學 === 電子工程研究所 === 102 === Due to the evolution of the advanced process technology entering the nano-scale era, in accordance with the principles of Moore's law, in order to enhance metal-oxide-semiconductor field-effect transistor (MOSFET) performance, therefore, narrowing MOSFETs d...

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Bibliographic Details
Main Authors: Chao-Wang Li, 李朝旺
Other Authors: Mu-Chun Wang
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/98178453692740145434