Investigation of Device Characteristics and Reliability on High Voltage MOSFET
碩士 === 國立成功大學 === 微電子工程研究所 === 103 === In the thesis, hot-carrier-induced degradation and mechanism as well as the gate oxide integrity issue of high voltage metal-oxide–semiconductor field- effect transistors (HVMOS) with different layout parameters were investigated. There were three kinds of para...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44996822617130029654 |