Using Simulation to Investigate and Control RSCE Effects of 28 nm nMOSFETs with HK/MG stack.
碩士 === 國立臺北科技大學 === 機電整合研究所 === 103 === In the recent research, introducing the high-k/metal-gate (HK/MG) on advanced MOSFET devices replacing the conventional oxynitride (SiON)/poly-gate is a main trend. However, due to the advanced progress of process technology, the gate channel lengths of modern...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/48n36n |